s505tx/s505txr/S505TXRW document number 85080 rev. 1.3, 05-sep-08 vishay semiconductors www.vishay.com 1 19216 sot143 sot143r sot343r 1 2 4 3 2 1 3 4 electrostatic sensiti v ede v ice. o b ser v epreca u tions for handling. 1 2 4 3 not for new design, this pr oduct will be obsoleted soon mosmic ? for tv-tuner prestage with 5 v supply voltage comments mosmic - mos m onolithic i ntegrated c ircuit features ? easy gate 1 switch-o ff with pnp switching transistors inside pll ? high agc-range with less steep slope ? integrated gate protection diodes ? low noise figure ? high gain, high forward transadmittance (30 ms typ.) ? improved cross modulation at gain reduction ? smd package ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications low noise gain controlled input stages in uhf-and vhf- tuner with 5 v supply voltage. typical application mechanical data typ: s505tx case: sot-143 plastic case weight: approx. 8.0 mg pinning: 1 = source, 2 = drain, 3 = gate 2, 4 = gate 1 typ: s505txr case: sot-143r plastic case weight: approx. 8.0 mg pinning: 1 = source, 2 = drain, 3 = gate 2, 4 = gate 1 typ: S505TXRW case: sot-343r plastic case weight: approx. 6.0 mg pinning: 1 = source, 2 = drain, 3 = gate 2, 4 = gate 1 parts table g2 g1 rf in s d v dd ( v ds ) c b lock rfc rf o u t 13650 c b lock c b lock rg1 v gg ( v rg1 ) agc part marking package s505tx x05 sot-143 s505txr x7r sot-143r S505TXRW wx7 sot-343r e3
www.vishay.com 2 document number 85080 rev. 1.3, 05-sep-08 s505tx/s505txr/S505TXRW vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu electrical dc characteristics t amb = 25 c, unless otherwise specified remark on improving intermodulation behavior: by setting r g1 smaller than 56 k , typical value of i dso will raise and improved intermodul ation behavior will be performed. electrical ac characteristics t amb = 25 c, unless otherwise specified v ds = v rg1 = 5 v, v g2s = 4 v, r g1 = 56 k , i d = i dso, f = 1 mhz parameter test condition symbol value unit drain - source voltage v ds 8v drain current i d 30 ma gate 1/gate 2 - source peak current i g1/g2sm 10 ma gate 1 - source voltage + v g1s 6v - v g1s 1.5 v gate 2 - source voltage v g2sm 6v total power dissipation t amb 60 c p tot 200 mw channel temperature t ch 150 c storage temperature range t stg - 55 to + 150 c parameter test condition symbol value unit channel ambient 1) r thcha 450 k/w parameter test condition symbol min ty p. max unit drain - source breakdown voltage i d = 10 a, v g1s = v g2s = 0 v (br)dss 12 v gate 1 - source breakdown voltage i g1s = 10 ma, v g2s = v ds = 0 v (br)g1ss 710v gate 2 - source breakdown voltage i g2s = 10 ma, v g1s = v ds = 0 v (br)g2ss 710v gate 1 - source leakage current + v g1s = 5 v, v g2s = v ds = 0 + i g1ss 20 na gate 2 - source leakage current v g2s = 5 v, v g1s = v ds = 0 i g2ss 20 na drain - source operating current v ds = v rg1 = 5 v, v g2s = 4 v, r g1 = 56 k i dso 81420ma gate 1 - source cut-off voltage v ds = 5 v, v g2s = 4, i d = 20 av g1s(off) 0.5 1.3 v gate 2 - source cut-off voltage v ds = v rg1 = 5 v, r g1 = 56 k , i d = 20 a v g2s(off) 0.8 1.0 1.4 v parameter test condition symbol min ty p. max unit forward transadmittance |y 21s |273035ms gate 1 input capacitance c issg1 1.8 2.2 pf feedback capacitance c rss 20 30 ff output capacitance c oss 1.0 pf
s505tx/s505txr/S505TXRW document number 85080 rev. 1.3, 05-sep-08 vishay semiconductors www.vishay.com 3 package dimensions in mm power gain g s = 2 ms, g l = 0.5 ms, f = 200 mhz g ps 28 db g s = 3,3 ms, g l = 1 ms, f = 800 mhz g ps 17 22 db agc range v ds = 5 v, v g2s = 1 to 4 v, f = 800 mhz g ps 45 50 db noise figure g s = 2 ms, g l = 0.5 ms, f = 200 mhz f1db g s = 3.3 ms, g l = 1 ms, f = 800 mhz f1.3db cross modulation input level for k = 1 % @ 0 db agc f w = 50 mhz, f unw = 60 mhz x mod 90 db v input level for k = 1 % @ 40 db agc f w = 50 mhz, f unw = 60 mhz x mod 100 105 db v parameter test condition symbol min ty p. max unit 96 12239
www.vishay.com 4 document number 85080 rev. 1.3, 05-sep-08 s505tx/s505txr/S505TXRW vishay semiconductors package dimensions in mm package dimensions in mm 96 12240 foot print recommendation: 0. 8 [0.031] 1.9 [0.075] 0. 8 [0.031] 1.7 [0.067] 1.2 [0.047] 0. 8 [0.031] 0.9 [0.035] 0.9 [0.035] 0.15 [0.006] 0.0 8 [0.003] 1.1 [0.043] 0.1 [0.004] max. 1.4 [0.055] 1.2 [0.047] 0.9 [0.035] 1. 8 [0.071] 2 [0.079] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030] 1.6 [0.063] 2. 8 [0.110] 3 [0.11 8 ] 2.35 [0.093] 2.6 [0.102] 0.35 [0.014] 0.5 [0.020] 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 1. 8 [0.071] 2 [0.079] 96 1223 8
s505tx/s505txr/S505TXRW document number 85080 rev. 1.3, 05-sep-08 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
